DocumentCode :
2520779
Title :
Researched on microstructure and density of sintered ZnO non-linear resistors
Author :
Chen, Chuntian ; Xiao, Haifeng ; Zou, Junyi ; Wang, Ru ; Zhu, Hanfei ; Zhang, Xianyou
Author_Institution :
Harbin Univ. of Sci. & Technol., Harbin, China
fYear :
2011
fDate :
16-19 Oct. 2011
Firstpage :
161
Lastpage :
163
Abstract :
Systematic researched have been made of the grain growth and density of sintered ZnO-based systems containing one or more additive oxides of the type Bi2O3, MnO2, and CoO. These samples were characterized using such techniques as scanning electron microscopy. The influence of the nature and amount of additive oxides and sintering temperature at 950 to 1350°C is discussed in relation to microstructure, breakdown voltage and the density present.
Keywords :
II-VI semiconductors; crystal microstructure; resistors; scanning electron microscopy; semiconductor growth; sintering; wide band gap semiconductors; zinc compounds; ZnO; additive oxides; breakdown voltage; microstructure; scanning electron microscopy; sintered non-linear resistors; sintering temperature; temperature 950 degC to 1350 degC; Additives; Grain size; Microstructure; Temperature dependence; Varistors; Zinc oxide; density; microstructure; non-linear resistors; sintering temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Insulation and Dielectric Phenomena (CEIDP), 2011 Annual Report Conference on
Conference_Location :
Cancun
ISSN :
0084-9162
Print_ISBN :
978-1-4577-0985-2
Type :
conf
DOI :
10.1109/CEIDP.2011.6232621
Filename :
6232621
Link To Document :
بازگشت