Noise properties of cryogenic microwave amplifiers and relevance to oscillator frequency stabilization

Author

Ivanov, Eugene ; Parker, Stefan ; Bara-Maillet, Romain ; Tobar, Michael

Author_Institution

Sch. of Phys., Univ. of Western Australia, Crawley, WA, Australia

Volume

61

Issue

4

fYear

2014

fDate

Apr-14

Firstpage

575

Lastpage

581

Abstract

We studied noise properties of a new generation of energy-efficient microwave low-noise high-electron-mobility-transistor amplifiers. The noise measurements were conducted both at room and cryogenic temperature with the amplifiers strongly decoupled from the environment to reduce the influence of ambient temperature fluctuations on their phase noise spectra. Our results show the importance of keeping the amplifiers operating in the small-signal regime if they are to be used for applications such as precision electromagnetic measurements and oscillator frequency stabilization.

Keywords

cryogenics; frequency stability; high electron mobility transistors; low noise amplifiers; microwave amplifiers; microwave oscillators; phase noise; ambient temperature fluctuations; cryogenic microwave amplifiers; cryogenic temperature; energy-efficient microwave low-noise HEMT amplifiers; high-electron-mobility-transistor; noise measurements; noise properties; oscillator frequency stabilization; phase noise spectra; precision electromagnetic measurements; room temperature; temperature 293 K to 298 K; Bridge circuits; Cryogenics; Noise measurement; Phase noise; Voltage measurement;

fLanguage

English

Journal_Title

Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on

Publisher

ieee

ISSN

0885-3010

Type

jour

DOI

10.1109/TUFFC.2014.2946

Filename

6822985