DocumentCode :
2520874
Title :
Impact of the CMP Process on the Multilevel Stack Mechanical Reliability
Author :
Moreau, S. ; Barbé, J. -C ; Leduc, P. ; Maitrejean, S. ; Passemard, G.
Author_Institution :
CEA-LETI - MINATEC, Grenoble, France
fYear :
2008
fDate :
9-12 Dec. 2008
Firstpage :
1264
Lastpage :
1269
Abstract :
The Chemical-Mechanical Polishing (CMP) process is still challenging for the semiconductor industry: during this key step, decohesion/adhesion fracture often occurs. The authors have developed a specific methodology in order to estimate this potential risk. This methodology uses finite element simulations in conjunction with a post-treatment computing the Energy Release Rate (ERR) which is related to the risk of delamination To perform the ERR calculation, the Virtual Crack Closure Technique (VCCT) was implemented. This methodology was used for ULK/Cu integration and was validated through experiments. The impact of the process on the wafer residual stress was exhibit. From the fracture point of view, the authors confirm the delamination increases with ULK levels and with lower dielectric elastic modulus.
Keywords :
adhesion; chemical mechanical polishing; copper; cracks; delamination; elastic moduli; finite element analysis; fracture; internal stresses; low-k dielectric thin films; reliability; CMP; adhesion fracture; chemical-mechanical polishing; decohesion fracture; delamination; dielectric; elastic modulus; energy release rate; finite element simulations; mechanical reliability; multilevel stack; post-treatment computing; ultra low-dielectric-constant film; virtual crack closure technique; wafer residual stress; Adhesives; Chemical industry; Chemical processes; Copper; Delamination; Dielectrics; Electronics industry; Finite element methods; Planarization; Residual stresses; Chemical Mechanical Polishing (CMP); Delamination; Finite Element simulation; Virtual Crack Closure Technique (VCCT);
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics Packaging Technology Conference, 2008. EPTC 2008. 10th
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-2117-6
Electronic_ISBN :
978-1-4244-2118-3
Type :
conf
DOI :
10.1109/EPTC.2008.4763604
Filename :
4763604
Link To Document :
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