A SPICE model for perimeter-gated single photon avalanche diode

Author

Habib, Mohammad Habib Ullah ; Al Mamun, Khandaker A. ; McFarlane, Nicole

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Univ. of Tennessee, Knoxville, TN, USA

fYear

2014

fDate

3-6 Aug. 2014

Firstpage

290

Lastpage

293

Abstract

In this work a comprehensive SPICE model is demonstrated for perimeter-gated single photon avalanche diodes (PGSPAD) fabricated in commercial 0.5 μm CMOS process. This model simulates the trigger of an avalanche event of PGSPAD due to photon absorption, along with the quenching behavior. It also simulates the I-V characteristic, where the breakdown voltage can be modulated with applied gate voltage. The modeling parameters are experimentally extracted from fabricated PGSPADs. This model simulates both the static and dynamic behaviors of the device. Simulated results are validated with experimental data to demonstrate the accuracy of the model.

Keywords

CMOS integrated circuits; SPICE; avalanche photodiodes; integrated optoelectronics; photoexcitation; I-V characteristic; PGSPAD; SPICE model; applied gate voltage; breakdown voltage; commercial CMOS process; dynamic behaviors; perimeter-gated single photon avalanche diode; photon absorption; size 0.5 mum; static behaviors; Breakdown voltage; Integrated circuit modeling; Logic gates; Photonics; Resistance; Resistors; Semiconductor device modeling; CMOS integrated circuits; SPICE; Single photon avalanche diode; avalanche breakdown; avalanche photodiodes; modeling; perimeter-gate; quenching;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (MWSCAS), 2014 IEEE 57th International Midwest Symposium on

Conference_Location

College Station, TX

ISSN

1548-3746

Print_ISBN

978-1-4799-4134-6

Type

conf

DOI

10.1109/MWSCAS.2014.6908409

Filename

6908409