The improved method of obtaining crystals with a small number of linear defects

The problem of obtaining a sufficient quantity of synthetic quartz crystals with a small number of linear defects is one of great urgency. The linear defects, such as growth dislocations, are mainly inherited from the seed. There are technologies (A.F. Arminton and I.F. Balasio, Proc. IEEE Int. Freq. Control Symp., pp. 3-7, 1984; Y. Mikawa et al, ibid, pp. 773-776, 1999) which provide practically complete exclusion of the inherited dislocations in the grown quartz crystals. However, using the x-dimension of a rectangular seed of 70 mm, these technologies diminish the crystal working dimension along the y-axis by 240 mm and 60 mm respectively. The method of obtaining crystals with small number of linear defects which is offered here allows reduction of the diminution of the crystal working dimension along the y-axis up to 10 mm, and also increase in the volume of the low dislocation region along the x-axis up to the necessary dimensions. Now at the plant "Kristall", there is a sufficient quantity of seed-crystals with a small number of linear defects, and with low etch channel density.