Title :
Unveiling switching mechanisms in RRAMs
Author :
Yu, Zhiping ; Wang, Yan
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
Resistive random access memories (RRAMs) are deemed as one type of a few promising alternative non-volatile memories (NVMs) to the mainstreamNAND/NOR flash. The switching mechanisms for RRAMs, however, remain murky and a quantitative or semi-empiricalmodel is urgently needed. This talk reviews the status of modeling switching mechanisms in both TMO (transition metal oxide) RRAMs and carbon-based RRAMs, and describes recent research progress at authors´ group in Tsinghua University.
Keywords :
NAND circuits; NOR circuits; flash memories; random-access storage; transition metal compounds; NVM; TMO RRAM; carbon-based RRAM; mainstream NAND/NOR flash; non-volatile memories; resistive random access memories; switching mechanisms; transition metal oxide RRAM; Ions; Materials; Mathematical model; Memory management; Metals; Random access memory; Switches;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2010 IEEE International Conference of
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-9997-7
DOI :
10.1109/EDSSC.2010.5713731
