Title :
New CMOS inverter-based voltage multipliers
Author :
Lin, Ho-Cheng ; Wu, Dong-Shiuh ; Kung, Che-Min ; Hwang, Yuh-Shyan ; Chen, Jiann-Jong
Author_Institution :
Dept. of Electron. Eng., Nat. Taipei Univ. of Technol., Taipei, Taiwan
Abstract :
Four new CMOS inverter-based voltage multipliers consisted of PMOS/NMOS pass transistors, inverter circuits, and capacitors are proposed in the paper. The proposed voltage multipliers which combine the functions of rectifiers and charge-pumps improve the power conversion efficiency and reduce the number of passive components therefore they are suitable for the integration. The voltage multiplier with positive output voltage is implemented with TSMC 0.35 μm CMOS 2P4M processes, and the experimental results have showed good agreement with the theoretical analysis. The chip area without pads is only 1.75×1.32 mm2 for five-stage positive output voltage of voltage multiplier.
Keywords :
CMOS analogue integrated circuits; charge pump circuits; invertors; rectifiers; voltage multipliers; CMOS inverter-based voltage multipliers; PMOS-NMOS pass transistors; TSMC CMOS 2P4M processes; capacitors; charge-pumps; five-stage positive output voltage; inverter circuits; passive components; size 0.35 mum; CMOS integrated circuits; Charge pumps; MOS devices; Radiofrequency identification; Rectifiers; Threshold voltage; Transistors;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2010 IEEE International Conference of
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-9997-7
DOI :
10.1109/EDSSC.2010.5713740
