A CMOS short pulse generator with a high-voltage stacked MOSFET switch

Author

Jiwei Sun ; Pingshan Wang

Author_Institution

Dept. of Electr. & Comput. Eng., Clemson Univ., Clemson, SC, USA

fYear

2014

fDate

3-6 Aug. 2014

Firstpage

414

Lastpage

417

Abstract

This paper presents a CMOS short pulse generator with a high-voltage stacked MOSFET switch, which is developed to overcome the low breakdown voltage limitations of CMOS processes. The six stacked MOSFET switch is fabricated in a commercial 0.13 μm CMOS process. The measurement results agree with simulation results reasonably well. A CMOS short pulse generator circuit with 5 mm pulse-forming-line (PFL) is also implemented with the switch. Pulses of ~2.44 V amplitude and ~122 ps duration on a 50 Ω load are obtained after de-embedding the connection system. The discrepancies between measurements and anticipated results (i.e. 4.8 V output with 77 ps pulse duration) include measurement connection system and parasitic effects.

Keywords

CMOS integrated circuits; MOSFET circuits; field effect transistor switches; pulse generators; semiconductor device breakdown; CMOS short pulse generator circuit; commercial CMOS process; high-voltage stacked MOSFET switch; low breakdown voltage limitations; measurement connection system; parasitic effects; pulse-forming-line; resistance 50 ohm; size 0.13 mum; size 5 mm; time 77 ps; voltage 4.8 V; CMOS integrated circuits; CMOS process; MOSFET; Pulse generation; Pulse measurements; Switches; Switching circuits; high voltage switch; pulse forming line; short pulse generator; stacked MOSFETs;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (MWSCAS), 2014 IEEE 57th International Midwest Symposium on

Conference_Location

College Station, TX

ISSN

1548-3746

Print_ISBN

978-1-4799-4134-6

Type

conf

DOI

10.1109/MWSCAS.2014.6908440

Filename

6908440