• DocumentCode
    2521624
  • Title

    2.4 GHz GaAs PHEMT medium power amplifier for wireless LAN applications

  • Author

    Rasmi, Amiza ; Rose, M. Rafie Che ; Abdul Rahim, Ahmad Ismat ; Marzuki, Arjuna

  • Author_Institution
    TM Innovation Centre, TM R&D Sdn Bhd, Cyberjaya, Malaysia
  • fYear
    2010
  • fDate
    15-17 Dec. 2010
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper describes the design and measurement of a medium power amplifier (MPA) using 0.15 μm GaAs PHEMT technology for wireless application. At 2.4 GHz and 3.0 V of VDS, a fabricated MPA exhibits a P1dB of 15.20 dBm, PAE of 12.70% and gain of 9.70 dB. The maximum current, Imax is 84.40 mA and the power consumption for this device is 253.20 mW. The die size of this amplifier is 1.2 mm × 0.7 mm.
  • Keywords
    III-V semiconductors; gallium arsenide; high electron mobility transistors; microwave amplifiers; power amplifiers; wireless LAN; PHEMT medium power amplifier; current 84.4 mA; efficiency 12.7 percent; frequency 2.4 GHz; gain 9.7 dB; power 253.2 mW; size 0.15 mum; voltage 3 V; wireless LAN applications; CMOS integrated circuits; Gain; Gallium arsenide; Impedance matching; PHEMTs; Power amplifiers; Power generation; 2.4 GHz; GaAs PHEMT; medium power amplifier; wireless LAN applications;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits (EDSSC), 2010 IEEE International Conference of
  • Conference_Location
    Hong Kong
  • Print_ISBN
    978-1-4244-9997-7
  • Type

    conf

  • DOI
    10.1109/EDSSC.2010.5713754
  • Filename
    5713754
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2521624