• DocumentCode
    2521697
  • Title

    Bipolar switching analysis and negative resistance phenomenon in TiOx-based devices

  • Author

    Wang, Linkai ; Jia, Ze ; Ren, Tianling

  • Author_Institution
    Tsinghua Nat. Lab. for Inf. Sci. & Technol., Tsinghua Univ., Beijing, China
  • fYear
    2010
  • fDate
    15-17 Dec. 2010
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    This work addresses the negative resistance phenomenon in TiOx-based resistive-switching cells applied in RRAM. The switching behavior of the Ag (or Pt, top)/TiOx/Pt (bottom) structure was also carefully analyzed. The negative resistance phenomenon and switching behavior can be modeled to space-charge-limited conduction (SCLC) mechanism with asymmetric electron trapping centers. A two-variable model based on SCLC is also proposed.
  • Keywords
    negative resistance; random-access storage; titanium compounds; RRAM; TiOx; asymmetric electron trapping centers; bipolar switching analysis; negative resistance phenomenon; resistive switching memory; resistive-switching cells; space-charge-limited conduction mechanism; two-variable model; Conductivity; Electrodes; Resistors; Switches; TiOx; asymmetric electron trap; negative resistance; space-charge-limited conduction (SCLC);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits (EDSSC), 2010 IEEE International Conference of
  • Conference_Location
    Hong Kong
  • Print_ISBN
    978-1-4244-9997-7
  • Type

    conf

  • DOI
    10.1109/EDSSC.2010.5713758
  • Filename
    5713758
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2521697