DocumentCode
252186
Title
Post-silicon tuning aware wafer matching algorithm for 3d integration of ICs
Author
Sangdo Park ; Taewhan Kim
Author_Institution
Syst. LSI, Samsung Electron. Co. Ltd., Yongin, South Korea
fYear
2014
fDate
3-6 Aug. 2014
Firstpage
511
Lastpage
514
Abstract
This work addresses the problem of wafer-to-wafer matching algorithm for 3D integration of ICs. One critical limitation of the traditional wafer matching methods is that they have attempted to maximize the number of resulting 3D ICs with no faulty (bad) die, but never took into account the time variation between the individual dies in a 3D integrated chip. We show that without considering time variation between dies as well as within wafers during wafer-to-wafer matching, a more aggressive post-silicon tuning is required with increased design cost or a reduced parametric yield of chips is resulted. To overcome this limitation, we propose a post-silicon tuning aware comprehensive wafer matching algorithm to improve the parametric yield of 3D chips. Through experiments with benchmark designs, it is shown that the proposed wafer matching algorithm is able to enhance the parametric yield by up to 8%.
Keywords
elemental semiconductors; silicon; three-dimensional integrated circuits; 3D IC; 3D integrated chip; Si; parametric yield improvement; post-silicon tuning aware comprehensive wafer matching algorithm; wafer-to-wafer matching algorithm; Algorithm design and analysis; Benchmark testing; Clocks; Integrated circuits; Three-dimensional displays; Timing; Tuning;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems (MWSCAS), 2014 IEEE 57th International Midwest Symposium on
Conference_Location
College Station, TX
ISSN
1548-3746
Print_ISBN
978-1-4799-4134-6
Type
conf
DOI
10.1109/MWSCAS.2014.6908464
Filename
6908464
Link To Document