• DocumentCode
    252186
  • Title

    Post-silicon tuning aware wafer matching algorithm for 3d integration of ICs

  • Author

    Sangdo Park ; Taewhan Kim

  • Author_Institution
    Syst. LSI, Samsung Electron. Co. Ltd., Yongin, South Korea
  • fYear
    2014
  • fDate
    3-6 Aug. 2014
  • Firstpage
    511
  • Lastpage
    514
  • Abstract
    This work addresses the problem of wafer-to-wafer matching algorithm for 3D integration of ICs. One critical limitation of the traditional wafer matching methods is that they have attempted to maximize the number of resulting 3D ICs with no faulty (bad) die, but never took into account the time variation between the individual dies in a 3D integrated chip. We show that without considering time variation between dies as well as within wafers during wafer-to-wafer matching, a more aggressive post-silicon tuning is required with increased design cost or a reduced parametric yield of chips is resulted. To overcome this limitation, we propose a post-silicon tuning aware comprehensive wafer matching algorithm to improve the parametric yield of 3D chips. Through experiments with benchmark designs, it is shown that the proposed wafer matching algorithm is able to enhance the parametric yield by up to 8%.
  • Keywords
    elemental semiconductors; silicon; three-dimensional integrated circuits; 3D IC; 3D integrated chip; Si; parametric yield improvement; post-silicon tuning aware comprehensive wafer matching algorithm; wafer-to-wafer matching algorithm; Algorithm design and analysis; Benchmark testing; Clocks; Integrated circuits; Three-dimensional displays; Timing; Tuning;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems (MWSCAS), 2014 IEEE 57th International Midwest Symposium on
  • Conference_Location
    College Station, TX
  • ISSN
    1548-3746
  • Print_ISBN
    978-1-4799-4134-6
  • Type

    conf

  • DOI
    10.1109/MWSCAS.2014.6908464
  • Filename
    6908464