Efficient and accurate RIE modeling methodology for BEOL 2.5D parasitic extraction

Author

Karsilayan, Nur Kurt ; Falbo, Jim ; Petranovic, Dusan

Author_Institution

Mentor Graphics Corp., Mentor, OH, USA

fYear

2014

fDate

3-6 Aug. 2014

Firstpage

519

Lastpage

522

Abstract

An efficient and accurate sensitivity based methodology is introduced for modeling reactive ion etch (RIE) in BEOL 2.5D parasitic extraction. Proposed methodology involves calibration of analytical equations based on layout parameters that are fitted to capacitance and sensitivity data from 2D field solver. Formulas are derived along with new capacitance and sensitivity equations in a 2.5D parasitic extraction framework. Calibration runtime is reduced due to sensitivity modeling while the overall BEOL accuracy is comparable to the case with no RIE effect. Proposed method has been validated over a wide range of technologies from 65nm to 20nm.

Keywords

integrated circuit interconnections; integrated circuit layout; integrated circuit modelling; sensitivity analysis; sputter etching; 2D field solver; BEOL 2.5D parasitic extraction; RIE modeling methodology; analytical equation calibration; calibration runtime; capacitance data; layout parameters; reactive ion etch modelling; sensitivity based methodology; sensitivity data; Calibration; Capacitance; Dielectrics; Equations; Mathematical model; Metals; Sensitivity; BEOL; Parasitic extraction; RIE; capacitance modeling; loading; process variation; sensitivity modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (MWSCAS), 2014 IEEE 57th International Midwest Symposium on

Conference_Location

College Station, TX

ISSN

1548-3746

Print_ISBN

978-1-4799-4134-6

Type

conf

DOI

10.1109/MWSCAS.2014.6908466

Filename

6908466