Title :
Varying sputtering ambient and annealing gas to optimize the electrical properties of MOS capacitor with HfLaO gate dielectric
Author :
Tao, Q.B. ; Lai, P.T.
Author_Institution :
Dept. of Electr. & Electron. Eng., Univ. of Hong Kong, Hong Kong, China
Abstract :
The impact of sputtering ambient on the properties of HfLaO film is studied by varying the ratio of Ar to O2. In order to optimize the electrical performances, the HfLaO film is then annealed in N2, NO or NH3 and evaluated based on Si MOS capacitors. As a result, appropriate ratio of Ar to O2 during sputtering can increase the permittivity of film while the NH3 annealing can improve its properties.
Keywords :
MOS capacitors; ammonia; annealing; argon; dielectric materials; hafnium compounds; lanthanum compounds; nitrogen compounds; permittivity; semiconductor thin films; sputtering; Ar; HfLaO; MOS capacitor; N2; NH3 annealing; NH3; NO; Si; ambient sputtering; electrical property optimisation; film permittivity; gas annealing; gate dielectric; Annealing; Artificial intelligence; Hafnium compounds; Lead; Logic gates; MOSFET circuits; Silicon compounds; HfLaO film; gate leakage; interface-state density; permittivity;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2010 IEEE International Conference of
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-9997-7
DOI :
10.1109/EDSSC.2010.5713772
