• DocumentCode
    2522033
  • Title

    Etching quartz crystals in anhydrous HF gas

  • Author

    Ballato, John M. ; Laffey, Sally M. ; Riman, Richard E. ; Vig, John R.

  • Author_Institution
    Rutgers Univ., USA
  • fYear
    1996
  • fDate
    5-7 Jun 1996
  • Firstpage
    102
  • Lastpage
    108
  • Abstract
    Exposing quartz crystals to anhydrous HF gas at 400°C results in a high density of helical etch channels, a white crusty surface, and other unusual features. The treatment results in a negligible thickness change. There is no similarity between the characteristics of these helical etch channels and the conventional etch channels produced by liquid etchants, nor is there a correlation between the incidence of helical etch channels and the type of quartz, or the surface finish. Exposure of quartz blanks to HF/H2O vapors emanating from a 49% aqueous HF solution at ~20°C resulted in conventional etch channels, faceting, and measurable frequency changes, indicating that the presence or absence of water is responsible for the differences in etching behaviors
  • Keywords
    etching; piezoelectric materials; quartz; 20 degC; 400 degC; HF; HF-H2O; HF/H2O vapors; SiO2; anhydrous HF gas; etching quartz crystals; faceting; frequency changes; helical etch channels; liquid etchants; surface finish; thickness change; water absence; white crusty surface; Crystals; Etching; Frequency measurement; Furnaces; Hafnium; Laboratories; Nitrogen; Optical microscopy; Surface treatment; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Frequency Control Symposium, 1996. 50th., Proceedings of the 1996 IEEE International.
  • Conference_Location
    Honolulu, HI
  • Print_ISBN
    0-7803-3309-8
  • Type

    conf

  • DOI
    10.1109/FREQ.1996.559826
  • Filename
    559826