Title :
Intrinsic capacitance of amorphous silicon and polysilicon thin film transistors
Author :
Martin, R.A. ; Hack, M. ; Shaw, J.G. ; Shur, M.
Author_Institution :
Xerox Palo Alto Res. Center, CA, USA
Abstract :
Results on the capacitance of thin-film transistors (TFTs) as a function of gate and drain voltage are shown. Measurements of amorphous silicon (a-Si) TFTs are in good agreement with a model based on the gradual channel approximation, accounting for the a-Si density of states. This model has been used with the circuit simulator SPICE. For polysilicon TFTs the measurements show two effects, an increase in the transistor´s capacitance due to the leakage current at negative gate bias and a rise due to the injected current from the kink effect.<>
Keywords :
amorphous semiconductors; capacitance; circuit analysis computing; elemental semiconductors; insulated gate field effect transistors; semiconductor device models; silicon; thin film transistors; MOSFET; SPICE; Si; capacitance; drain voltage; gate voltage; gradual channel approximation; injected current; kink effect; leakage current; model; negative gate bias; thin film transistors; Amorphous silicon; Capacitance; Circuit simulation; Computer hacking; Insulation; Laboratories; MOSFETs; SPICE; Thin film transistors; Voltage;
Conference_Titel :
Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1989.74298
