DocumentCode
2522145
Title
RESET modeling of PCM using thermal budget approach
Author
Kwong, K.C. ; He, Jin ; Mok, Philip K T ; Chan, Mansun
Author_Institution
Dept. of ECE, Hong Kong Univ. of Sci. & Technol., Kowloon, China
fYear
2010
fDate
15-17 Dec. 2010
Firstpage
1
Lastpage
4
Abstract
In this work, the phase transition from crystalline state to amorphous state during RESET programming of a phase change memory is studied. A thermal budget approach is developed to describe the effect of cell structure, input current pulse amplitude and the quenching time on the final resistance after RESET programming. The model has been implemented to a circuit simulator and verified by experimental data reported in the literature.
Keywords
amorphous state; circuit simulation; phase change memories; phase transformations; quenching (thermal); PCM; RESET modeling; RESET programming; amorphous state; circuit simulator; nonvolatile memory; phase change memory; phase transition; quenching time; thermal budget approach; SPICE Model; nonvolatile memory (NVM); phase change memory (PCM);
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits (EDSSC), 2010 IEEE International Conference of
Conference_Location
Hong Kong
Print_ISBN
978-1-4244-9997-7
Type
conf
DOI
10.1109/EDSSC.2010.5713782
Filename
5713782
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