DocumentCode
252216
Title
Design of RF amplifier with enhanced performance
Author
Ali, M.T. ; Ruiheng Wu
Author_Institution
Sch. of Eng., Univ. of Greenwich, Chatham, UK
fYear
2014
fDate
3-6 Aug. 2014
Firstpage
575
Lastpage
578
Abstract
In this paper, a RF CMOS amplifier is designed on the basis of a novel negative impedance linearization technique with negative differential resistance (NDR) element. The simulation results show that the designed amplifier can achieve high gain accuracy, good linearity with improved efficiency, revealing that the proposed technique could find wider application in RF/Microwave circuits and systems.
Keywords
CMOS analogue integrated circuits; radiofrequency amplifiers; NDR element; RF CMOS amplifier design; RF-microwave circuits; RF-microwave systems; gain accuracy; negative differential resistance element; negative impedance linearization technique; Accuracy; CMOS integrated circuits; Impedance; Linearization techniques; Microwave amplifiers; Radio frequency; Transistors; CMOS amplifier; NDR; RF feedback; linearization; negative impedance compensation;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems (MWSCAS), 2014 IEEE 57th International Midwest Symposium on
Conference_Location
College Station, TX
ISSN
1548-3746
Print_ISBN
978-1-4799-4134-6
Type
conf
DOI
10.1109/MWSCAS.2014.6908480
Filename
6908480
Link To Document