Title :
A nonlinear PIN diode model for use in multi-diode microwave and RF communication circuit simulation
Author_Institution :
Dept. of Electr. & Comput. Eng., Southeastern Massachusetts Univ., North Dartmouth, MA
Abstract :
A nonlinear p-i-n diode model suitable for use in microwave and RF communication circuit simulation is presented. The circuit nonlinear transfer functions are computed and verified with experimental distortion measurements on series and shunt reflective attenuators. These transfer functions are useful in circuit and device simulation since they are algebraic in nature and require minimal computation time. The model presented is applicable to both gallium arsenide and silicon p-i-n diodes, in packaged, beam lead or chip form
Keywords :
circuit analysis computing; nonlinear network analysis; p-i-n diodes; semiconductor device models; solid-state microwave devices; GaAs diodes; RF communication circuit simulation; Si diodes; circuit nonlinear transfer functions; device simulation; experimental distortion measurements; minimal computation time; multidiode microwave circuit simulation; nonlinear PIN diode model; nonlinear p-i-n diode model; packaged diodes; series reflective attenuation; shunt reflective attenuators; Attenuators; Circuit simulation; Computational modeling; Distortion measurement; Gallium arsenide; Microwave communication; Microwave devices; P-i-n diodes; Radio frequency; Transfer functions;
Conference_Titel :
Circuits and Systems, 1988., IEEE International Symposium on
Conference_Location :
Espoo
DOI :
10.1109/ISCAS.1988.15403
