Terahertz dynamics in semiconductor quantum structures

Author

Allen, S.J.

Author_Institution

Inst. for Quantum Eng., Sci. & Technol., California Univ., Santa Barbara, CA, USA

fYear

2002

fDate

26-26 Sept. 2002

Abstract

The Terahertz part of the electromagnetic spectrum defines a gap in solid state technology. This is most apparent if one focuses on sources. In this presentation we review experiments with the UCSB free-electron laser that have revealed the rich phenomena related to photon assisted transport in semiconductor quantum transport devices and the use of quasi-optical arrays and waveguide structures to measure Terahertz admittance of electrically biased devices.

Keywords

free electron lasers; infrared sources; optical arrays; optical waveguides; quantum optics; semiconductor quantum wells; submillimetre wave devices; submillimetre wave generation; EM spectrum Terahertz wavelengths; UCSB free-electron lasers; electrically biased device THz admittance measurement; electron transport electronics; multi quantum well heterostructures; photon assisted transport phenomena; quantum transition photonics; quasi-optical arrays; quasi-optical waveguide structures; semiconductor quantum transport devices; solid state THz sources; Admittance measurement; Electromagnetic spectrum; Electromagnetic waveguides; Free electron lasers; Optical arrays; Semiconductor laser arrays; Semiconductor waveguides; Solid state circuits; Submillimeter wave technology; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared and Millimeter Waves, 2002. Conference Digest. Twenty Seventh International Conference on

Conference_Location

San Diego, CA, USA

Print_ISBN

0-7803-7423-1

Type

conf

DOI

10.1109/ICIMW.2002.1076046

Filename

1076046