• DocumentCode
    2522391
  • Title

    Indium phosphide solar cells: P+-N or N+-P?

  • Author

    Parrott, J.E. ; Potts, A.

  • Author_Institution
    Dept. of Phys. & Astron., Univ. of Wales Coll. of Cardiff, UK
  • fYear
    1991
  • fDate
    7-11 Oct 1991
  • Firstpage
    153
  • Abstract
    A modeling study has been carried out to determine whether p+ -n or n+-p InP solar cells give better performance. The physical model used was standard except that radiative recombination was modified to allow for photon recycling. The numerical model combined one-dimensional solutions of the transport equations with the Handy model for series resistance. The parameters optimized were: front SRV, emitter doping, emitter thickness, number, and width of grid fingers. Calculations were done with only radiative recombination in the bulk and with a state-of-art level of SRH (Schottky-Read-Hall) recombination. The results suggest that in the absence of SRH recombination p+-n with η=23.4% are better than n+-p with η=23.1%
  • Keywords
    III-V semiconductors; indium compounds; solar cells; Handy model; InP solar cells; Schottky-Read-Hall recombination; emitter doping; emitter thickness; front SRV; grid fingers; n+-p semiconductor; p+-n semiconductor; radiative recombination; series resistance; Indium phosphide; Materials reliability; Numerical models; Photovoltaic cells; Predictive models; Radiative recombination; Recycling; Reliability theory; Semiconductor device reliability; Semiconductor devices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
  • Conference_Location
    Las Vegas, NV
  • Print_ISBN
    0-87942-636-5
  • Type

    conf

  • DOI
    10.1109/PVSC.1991.169200
  • Filename
    169200