Title :
Bulk and FDSOI SRAM resiliency to radiation effects
Author :
Calienes, Walter ; Reis, R. ; Anghel, Costin ; Vladimirescu, Andrei
Author_Institution :
Inst. de Inf., Univ. Fed. do Rio Grande do Sul, Porto Alegre, Brazil
Abstract :
With the increasing density of transistors in advanced technology nodes, the radiation is an ongoing problem affecting the contents of memory cells. This paper presents the simulation results of radiation immunity for two different memory cell technologies: 32nm Bulk CMOS and 28nm FDSOI. The effect of Single-Event Upset (SEU) caused by the heavy ion impact with different Linear Energy Transfer characteristic (LET) is analyzed. A 32nm bulk 6T-SRAM cell is at least 6 times less resilient to heavy ion strikes than the 28nm FDSOI one.
Keywords :
CMOS memory circuits; SRAM chips; radiation hardening (electronics); silicon-on-insulator; FDSOI SRAM resiliency; LET; SEU; advanced technology nodes; bulk 6T-SRAM cell; bulk CMOS SRAM; linear energy transfer characteristic; memory cell technology; radiation effects; radiation immunity; single-event upset effect; size 28 nm; size 32 nm; Computational modeling; Equations; Integrated circuit modeling; Mathematical model; Semiconductor process modeling; Silicon; Transistors; Bulk transistor; FDSOI transistor; Heavy Ion; Microelectronics; Radiation Effects; Simulation; Single-Event Upset;
Conference_Titel :
Circuits and Systems (MWSCAS), 2014 IEEE 57th International Midwest Symposium on
Conference_Location :
College Station, TX
Print_ISBN :
978-1-4799-4134-6
DOI :
10.1109/MWSCAS.2014.6908500
