DocumentCode :
2522761
Title :
Effect of radial ion diffusion on simulation of positive corona discharge in SF6 gas
Author :
Hirukawa, Manabu ; Okabe, Shozo
Author_Institution :
Dept. of Electr. Eng., Tokai Univ., Kanagawa, Japan
Volume :
2
fYear :
2000
fDate :
2000
Firstpage :
621
Abstract :
The effect of the drift and diffusion of electrons, positive and negative ions during corona discharge processes must be taken into account for an accurate analysis of such dynamic processes. In particular, the bi-directional drift and diffusion of all charged particles when voltages are applied for long periods of time must be carefully considered. Then we simulate the positive corona discharge of SF6 taking account of the effect of such bi-directional drift and diffusion of charged by employing a triple channel model where the discharge space consisted of three coaxial layers. In this paper, we report on a new method for shortening computation time by setting non-uniformly spaced calculation points near and between the electrodes. Further, we discuss the effects of ion diffusion and the presence of residual space charge on the distributions of charged particle density, electric field and the waveforms of the corona pulse current
Keywords :
SF6 insulation; corona; diffusion; plasma density; plasma simulation; plasma transport processes; space charge; SF6; SF6 gas; bi-directional drift; charged particle density; coaxial layers; computation time; corona pulse current; drift; dynamic processes; electric field; electrons; ion diffusion; negative ions; positive corona discharge; positive ions; radial ion diffusion; residual space charge; triple channel model; waveforms; Analytical models; Computational modeling; Corona; Dielectrics and electrical insulation; Electrodes; Electrons; Needles; Space charge; Sulfur hexafluoride; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Properties and Applications of Dielectric Materials, 2000. Proceedings of the 6th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
0-7803-5459-1
Type :
conf
DOI :
10.1109/ICPADM.2000.876092
Filename :
876092
Link To Document :
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