Silicon bulk micromachined FBAR filters for W-CDMA applications

Author

Park, Jae Y. ; Lee, Hee C. ; Lee, Kyeong H. ; Ko, Young J. ; Bu, Jong U.

Author_Institution

Mater. & Devices Lab., LG Electron. Inst. of Technol., Seoul, South Korea

Volume

3

fYear

2003

fDate

7-9 Oct. 2003

Firstpage

907

Abstract

In this paper, fully integrated FBAR (Film Bulk Acoustic Wave Resonator) filters have been newly designed, fabricated, and characterized for W-CDMA mobile communication system applications by using silicon bulk micromachining technology. The proposed FBAR ladder type filters are realized by connecting 3 resonators in series and 4 resonators in parallel. The utilized resonators are comprised of aluminum nitride (AlN) piezoelectric material sandwiched by Mo electrodes on top of silicon nitride supporting membrane. The measured quality factor is 1530 at 1.9 GHz. The fabricated FBAR filters have insertion losses of -2.8 dB over the pass band, 0.5 dB ripple in pass band, absolute attenuation of 35 dB and 43 dB at 1.6 GHz to 1.875 GHz and 2.110 GHz to 2.170 GHz, respectively. They have the better performance characteristics than the conventional SAW (Surface Acoustic Wave) filters. The actual die sizes of the fabricated FBAR filter are 1.2 mm×1.4 mm before packaging and 3 mm×3 mm after packaging, respectively.

Keywords

Q-factor; acoustic resonator filters; aluminium compounds; band-pass filters; code division multiple access; elemental semiconductors; mobile communication; piezoelectric materials; semiconductor thin films; silicon; -2.8 dB; 0.5 dB; 1.6 to 1.875 GHz; 1.9 GHz; 2.110 to 2.170 GHz; 35 dB; 43 dB; Mo electrodes; Si-AlN; W-CDMA mobile communication system applications; aluminum nitride compounds; film bulk acoustic wave resonator filters; pass band filter; piezoelectric material; quality factor; silicon bulk micromachining; Acoustic waves; Band pass filters; Film bulk acoustic resonators; Mobile communication; Multiaccess communication; Packaging; Resonator filters; Semiconductor films; Silicon; Surface acoustic waves;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2003. 33rd European

Print_ISBN

1-58053-834-7

Type

conf

DOI

10.1109/EUMC.2003.1262798

Filename

1262798