A wideband class E PA with more than 40% PAE and over 800 MHz bandwidth

Author

Gunturi, Praveen ; Kotecki, David E.

Author_Institution

Sch. of Electr. & Comput. Eng., Univ. of Maine, Orono, ME, USA

fYear

2014

fDate

3-6 Aug. 2014

Firstpage

725

Lastpage

728

Abstract

A Power Amplifier (PA) for wireless applications operating between 2.6 GHz and 3.4 GHz with power added efficiency (PAE) of more than 40% is presented in this paper. By varying the width of the PA transistor, the performance of the PA in terms of PAE and stability is studied. The PAE is more than 40% for the bandwidth of 800 MHz. The input matching circuit is implemented using on-chip transmission lines and the input reflection coefficient is less than -8dB over the bandwidth. The output power and PAE are 15.5dBm and 52% respectively at 2.7 GHz. The power amplifier is implemented in 180nm CMOS technology and the total area is approximately equal to 1mm². The circuit includes electrostatic discharge (ESD) protection.

Keywords

CMOS analogue integrated circuits; MMIC power amplifiers; UHF amplifiers; circuit stability; field effect MMIC; wideband amplifiers; CMOS technology; ESD; PA transistor; PAE; efficiency 52 percent; electrostatic discharge protection; frequency 2.6 GHz to 3.4 GHz; input matching circuit; input reflection coefficient; on-chip transmission lines; power added efficiency; power amplifier; size 180 nm; wideband class E PA; Bandwidth; CMOS integrated circuits; Circuit stability; Power generation; Power transmission lines; Transistors; Wireless communication; Input Reflection Coefficient; Power Added Efficiency; Stability factor;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (MWSCAS), 2014 IEEE 57th International Midwest Symposium on

Conference_Location

College Station, TX

ISSN

1548-3746

Print_ISBN

978-1-4799-4134-6

Type

conf

DOI

10.1109/MWSCAS.2014.6908517

Filename

6908517