Title :
Band gap narrowing in heavily doped N+ indium phosphide
Author :
Tyagi, S.D. ; Singh, K. ; Ghandhi, S.K. ; Borrego, J.M.
Author_Institution :
Dept. of Electr. Comput. & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
The results of measurements of bandgap narrowing in sulfur-doped n +InP are given. The room-temperature photoluminescence spectra of n+InP layers were measured, and from the shift in energy of the photoluminescence peak the authors calculated the bandgap narrowing as a function of doping concentration which was measured using the Hall effect. In addition, bandgap narrowing obtained from the contact potential measurements using C-V characteristics was compared with bandgap narrowing from photoluminescence measurements, and the results show reasonable agreement
Keywords :
III-V semiconductors; energy gap; indium compounds; semiconductor doping; solar cells; sulphur; C-V characteristics; Hall effect; InP:S solar cells; bandgap narrowing; contact potential measurements; doping concentration; photoluminescence peak; semiconductor; Capacitance-voltage characteristics; Energy measurement; Hall effect; Indium phosphide; Magnetic field measurement; Photoluminescence; Photonic band gap; Photovoltaic cells; Semiconductor device doping; Temperature;
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
DOI :
10.1109/PVSC.1991.169203
