DocumentCode :
2523020
Title :
Methods of investigation of the properties of the optoelectronic devices with use of atomic force microscopy
Author :
Gajewski, Krzysztof ; Wielgoszewski, Grzegorz
Author_Institution :
Fac. of Microsyst. Electron. & Photonics, Wroclaw Univ. of Technol., Wroclaw, Poland
fYear :
2010
fDate :
25-27 June 2010
Firstpage :
18
Lastpage :
20
Abstract :
In the modern world, the influence the optoelectronic devices on the communications methods are still increasing. Therefore it is very important to And appropriate techniques for design, building, testing, measuring and packaging. The measurement techniques of these devices in nanometer scale help us to solve problems like the quality of the device layers and give us comparison of modeling and experimental results. In this article we present selected techniques of measurement of the optoelectronic devices like solar cells, lasers or photodiodes. We describe techniques like Kelvin probe force microscopy, electrostatic force microscopy and example results obtained in our laboratory.
Keywords :
atomic force microscopy; lasers; optoelectronic devices; photodiodes; solar cells; Kelvin probe force microscopy; atomic force microscopy; electrostatic force microscopy; lasers; optoelectronic devices; photodiodes; solar cells; Laser modes; Measurement by laser beam; Microscopy; Surfaces;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Students and Young Scientists Workshop, 2010 IEEE International
Conference_Location :
Szklarska Poreba
Print_ISBN :
978-1-4244-8324-2
Type :
conf
DOI :
10.1109/STYSW.2010.5714160
Filename :
5714160
Link To Document :
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