Title :
Optimization of InGaAs quantum dots for optoelectronic applications
Author :
Ruifei Duan ; Baoqiang Wang ; Zhanping Zhu ; Yiping Zeng
Author_Institution :
Novel Mater. Dept., Chinese Acad. of Sci., Beijing, China
Abstract :
Quantum dot infrared photodetectors (QDIP) are at the center of research interest nowadays. However, the real QDIP is inferior to those predicted in theory, in which the dot density is much higher than those reported. Through optimizing the growth conditions, we realized the control of high-density quantum dot growth. This will be very useful for future QDIP development.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; infrared detectors; molecular beam epitaxial growth; optoelectronic devices; photodetectors; semiconductor growth; semiconductor quantum dots; InGaAs quantum dots; InGaAs-GaAs; QDIP; growth conditions optimization; high-density quantum dot growth; infrared photodetectors; optoelectronic applications; quantum dot IR photodetectors; solid source MBE; Electromagnetic wave absorption; Indium gallium arsenide; Photodetectors; Quantum dots; Quantum mechanics; Semiconductor materials; Solids; Temperature; US Department of Transportation; Valves;
Conference_Titel :
Infrared and Millimeter Waves, 2002. Conference Digest. Twenty Seventh International Conference on
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-7423-1
DOI :
10.1109/ICIMW.2002.1076094
