Sheet resistance and optical properties of ITO thin films deposited by magnetron sputtering with different O2/Ar flow ratio

Author

Mazur, Michal ; Domaradzki, Laroslaw ; Kaczmarek, Danuta ; Moh, Sarfaraz ; Placido, Frank

Author_Institution

Fac. of Microsyst. Electron. & Photonics, Wroclaw Univ. of Technol., Wroclaw, Poland

fYear

2010

fDate

25-27 June 2010

Firstpage

60

Lastpage

63

Abstract

Transparent conducting indium-tin oxide (ITO) thin films play a very important role in the field of optoelectronic devices such as photovoltaic cells and flat panel display devices. ITO films display low electrical resistance and high transmittance in the visible range of the optical spectrum. ITO thin films were deposited using a magnetron sputtering with a microwave source to improve the plasma ionisation. Microwave assisted reactive sputtering allows to obtain homogeneous and high optical quality ITO thin films. Optical properties were investigated by Hitachi spectrophotometer and Aquila instrumentation. Thickness of deposited thin films was calculated on the transmittance and reflectance basis. Sheet resistance was measured using standard four-point probe method. Figure of merit was also calculated.

Keywords

electrical resistivity; indium compounds; plasma materials processing; refractive index; semiconductor growth; semiconductor thin films; sheet materials; sputter deposition; visible spectra; wide band gap semiconductors; Aquila instrumentation; Hitachi spectrophotometer; ITO; ITO thin films; electrical properties; flat panel display devices; flow ratio; magnetron sputtering deposition; microwave assisted reactive sputtering; optical properties; optoelectronic devices; photovoltaic cells; plasma ionisation; reflectance basis; refractive index; sheet resistance; standard four-point probe method; transmittance basis; visible range spectra; wideband gap semiconductor; Indium tin oxide; Optical films; Optical pumping; Optical reflection; Plasmas; Reflectivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Students and Young Scientists Workshop, 2010 IEEE International

Conference_Location

Szklarska Poreba

Print_ISBN

978-1-4244-8324-2

Type

conf

DOI

10.1109/STYSW.2010.5714168

Filename

5714168