Dielectric properties of SiCF film deposited by PECVD with low dielectric constants

Author

Kim, K.H. ; Lim, K.J. ; Ryu, W.S. ; Lee, J.S.

Author_Institution

Dept. of Mater. Eng. & Electr. Eng., Chung-Buk Nat. Univ., Cheongju, South Korea

fYear

1998

fDate

22-25 Jun 1998

Firstpage

229

Lastpage

232

Abstract

Low dielectric constant fluorocarbonated siliceous films were deposited by PECVD (plasma enhanced chemical vapor deposition) using 2% SiH₄/N₂ and CF₄ gases in the chamber with parallel plate electrode of 13.56 MHz RF. The effects of RF power, chamber pressure and gas composition on the deposition rate were studied and the morphology of the films was tested by AES, XPS, AFM and SEM. The dielectric constant of the film determined by the capacitance-voltage measurements was 2.3

Keywords

dielectric thin films; permittivity; plasma CVD coatings; silicon compounds; 13.56 MHz; AES; AFM; PECVD; RF parallel plate electrode; SEM; SiCF; XPS; capacitance-voltage measurement; dielectric constant; dielectric properties; fluorocarbonated siliceous film; morphology; plasma enhanced chemical vapor deposition; Capacitance-voltage characteristics; Chemical vapor deposition; Dielectric constant; Electrodes; Gases; Morphology; Plasma chemistry; Plasma properties; Radio frequency; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Conduction and Breakdown in Solid Dielectrics, 1998. ICSD '98. Proceedings of the 1998 IEEE 6th International Conference on

Conference_Location

Vasteras

Print_ISBN

0-7803-4237-2

Type

conf

DOI

10.1109/ICSD.1998.709267

Filename

709267