Performance analysis of Ti∶ LiNbO3 1×2 digital photonic switch with SiO2 buffer layer

Author

Singh, Ghanshyam ; Yadav, R.P. ; Janyani, Vijay

Author_Institution

Dept. of Electron. & Commun. Eng., Malaviya Nat. Inst. of Technol. Jaipur, Jaipur, India

fYear

2010

fDate

10-12 Sept. 2010

Firstpage

122

Lastpage

124

Abstract

We demonstrate a polarization and wavelength independent digital photonic switch with optimized on-chip area coverage and reduced driving voltage. A symmetrical SiO₂ buffer layer was introduced between channel and electrode regions to optimize its thermal stability and to reduce absorption losses. Switching is achieved through adiabatic mode evolution in an asymmetric waveguide junction. The switch has been found satisfactory for THz operation with switching voltages in the range of ±18-to-21V and switch losses in the range of 0.50 to 0.75% only. A channel profile of titanium indiffused waveguide on an x-cut lithium niobate substrate is used for lightwave propagation.

Keywords

buffer layers; light polarisation; light propagation; lithium compounds; optical losses; optical planar waveguides; optical switches; silicon compounds; thermal stability; titanium; LiNbO₃:Ti-SiO₂; absorption losses; adiabatic mode evolution; asymmetric waveguide junction; channel profile; lightwave propagation; optimized on-chip area coverage; polarization independent digital photonic switch; reduced driving voltage; switch losses; symmetrical buffer layer; thermal stability; voltage 18 V to -21 V; wavelength independent digital photonic switch; Digital optical switch; Titanium indiffusion in lithium niobate; buffer layer; switching characteristic;

fLanguage

English

Publisher

ieee

Conference_Titel

Mechanical and Electrical Technology (ICMET), 2010 2nd International Conference on

Conference_Location

Singapore

Print_ISBN

978-1-4244-8100-2

Electronic_ISBN

978-1-4244-8102-6

Type

conf

DOI

10.1109/ICMET.2010.5598334

Filename

5598334