Title :
A low noise CMOS readout front end for MEMs BioPotential sensor applications
Author :
Mohamed, Ahmed N. ; Ahmed, Hesham N.
Author_Institution :
Electron. Eng. Dept., Mil. Tech. Coll., Cairo, Egypt
Abstract :
In this paper, a low-noise CMOS readout front end for biopotential acquisition applications is presented. The proposed circuit, implemented using 130 nm standard CMOS process, has a thermal noise floor of 10 nV/√Hz, a corner frequency of 300 mHz, and dissipates 3.2μW of power when powered using a 1 V supply. The designed circuit occupies a die area of 0.007mm2 and thus renders itself as an excellent candidate for acquiring biopotential signals through MEMS sensors.
Keywords :
CMOS integrated circuits; biosensors; microsensors; readout electronics; thermal noise; MEMS biopotential sensor; biopotential acquisition; frequency 300 mHz; low noise CMOS readout front end; power 3.2 muW; size 130 nm; thermal noise floor; voltage 1 V; Biosensors; CMOS integrated circuits; Choppers (circuits); Layout; Micromechanical devices; Noise; capacitively coupled instrumentation amplifier; charge injection; chopper amplifier; clock feedthrough; flicker noise;
Conference_Titel :
Circuits and Systems (MWSCAS), 2014 IEEE 57th International Midwest Symposium on
Conference_Location :
College Station, TX
Print_ISBN :
978-1-4799-4134-6
DOI :
10.1109/MWSCAS.2014.6908553
