Fabrication of integrated THz sources

Author

Schoenthal, G.S. ; Bishop, W.L. ; Haiyong Xu ; Hesler, J.L. ; Weikle, R.M., II ; Crowe, T.W.

Author_Institution

Appl. Electrophys. Lab., Virginia Univ., Charlottesville, VA, USA

fYear

2002

fDate

26-26 Sept. 2002

Firstpage

127

Lastpage

128

Abstract

Fabrication methods for integrated, GaAs-on-Quartz, Schottky based sideband generators and frequency multipliers operating at 200 GHz and 600 GHz are discussed. Important attributes include sub-micron anodes, air-bridged Schottky contacts, epitaxial layer bonding, low temperature (<200/spl deg/C) processing, and quasi-ohmic contacts. Photos of completed circuits and test results are presented.

Keywords

III-V semiconductors; Schottky barriers; circuit CAD; circuit simulation; circuit tuning; frequency multipliers; gallium arsenide; integrated circuit design; integrated circuit manufacture; integrated circuit modelling; ohmic contacts; submillimetre wave generation; submillimetre wave integrated circuits; wafer bonding; 200 C; 200 GHz; 600 GHz; GaAs-SiO/sub 2/; GaAs-on-quartz Schottky based sideband generators; GaAs-on-quartz integrated THz source fabrication; air-bridged Schottky contacts; epitaxial layer bonding; frequency multipliers; low temperature processing; quasi-ohmic contacts; sub-micron anodes; tunable submm-wave sources; Anodes; Circuit simulation; Circuit testing; Etching; Fabrication; Frequency; Gallium arsenide; Power generation; Schottky diodes; Tunable circuits and devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared and Millimeter Waves, 2002. Conference Digest. Twenty Seventh International Conference on

Conference_Location

San Diego, CA, USA

Print_ISBN

0-7803-7423-1

Type

conf

DOI

10.1109/ICIMW.2002.1076117

Filename

1076117