Title :
Measurement results of packaged millimeter-wave silicon IMPATT diodes
Author :
Luschas, M. ; Judaschke, R. ; Luy, J.-F.
Author_Institution :
Arbeitsbereich Hochfrequenztech., Technische Univ. Hamburg-Harburg, Germany
Abstract :
Recently, a new technology process for manufacturing packaged millimeter-wave silicon IMPATT diodes has been introduced. Detailed measurement and simulation results for these devices, operating in the D-band frequency range, are compared here. Results are obtained in rectangular, reduced height, waveguide resonators. CW RF-output power of more than 100 mW at 135 GHz and 50 mW at 150 GHz are reported.
Keywords :
IMPATT diodes; elemental semiconductors; millimetre wave diodes; rectangular waveguides; resonators; semiconductor device measurement; semiconductor device models; semiconductor device packaging; silicon; thermal management (packaging); thermal resistance; 100 mW; 135 GHz; 150 GHz; 50 mW; CW RF output power; D-band operating frequency range; Si; device characterization simulation/measurement; millimeter-wave silicon IMPATT diode manufacturing process; operating frequencies; packaged Si mm-wave IMPATT diodes; rectangular reduced height waveguide resonators; thermal resistance; Bonding; Diodes; Electrical resistance measurement; Heat sinks; Millimeter wave measurements; Millimeter wave technology; Packaging; Power generation; Silicon; Thermal resistance;
Conference_Titel :
Infrared and Millimeter Waves, 2002. Conference Digest. Twenty Seventh International Conference on
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-7423-1
DOI :
10.1109/ICIMW.2002.1076121
