Title :
High-Frequency Microwave Noise Characteristics of InAlN/GaN High-Electron Mobility Transistors on Si (111) Substrate
Author :
Arulkumaran, S. ; Ranjan, Kunal ; Ng, G.I. ; Manoj Kumar, C.M. ; Vicknesh, S. ; Dolmanan, S.B. ; Tripathy, Somanath
Author_Institution :
Temasek Labs., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
We report for the first time high-frequency microwave noise performance on 0.17-μm T-gate In0.17Al0.83N/GaN high-electron mobility transistors (HEMTs) fabricated on Si(111). The HEMTs exhibited a maximum drain current density of 1320 mA/mm, a maximum extrinsic transconductance of 363 mS/mm, an unity current gain cutoff frequency (fT) of 64 GHz and, a maximum oscillation frequency [fmax (U)/ fmax (MSG)] of 72/106 GHz. The product fmax(U) × Lg=12.24 GHz· μm is the highest value ever reported for InAlN/GaN HEMTs on Si substrate. At Vd=4 V and Vg=-2.25 V, the device exhibited a minimum noise figure (NFmin) of 1.16 dB for 10 GHz and 1.76 dB for 18 GHz. Small variation of NFmin (<;0.5 dB) from 8% to 48% with IDmax (100-636 mA/mm) was observed.
Keywords :
III-V semiconductors; gallium compounds; high electron mobility transistors; indium compounds; microwave field effect transistors; millimetre wave field effect transistors; semiconductor device noise; wide band gap semiconductors; HEMT; In0.17Al0.83N-GaN; MSG; Si; T-gate high-electron mobility transistor; frequency 10 GHz; frequency 106 GHz; frequency 18 GHz; frequency 72 GHz; high-frequency microwave noise characteristics; maximum drain current density; maximum extrinsic transconductance; maximum oscillation frequency; noise figure 1.16 dB; noise figure 1.76 dB; size 0.17 mum; unity current gain cutoff frequency; voltage -2.25 V; voltage 4 V; Gallium nitride; HEMTs; Logic gates; MODFETs; Noise; Silicon; Substrates; GaN-on-silicon; HEMT; InAl/GaN; InAlN/GaN; NFmin; cut-off frequency; linearity; maximum oscillation frequency;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2014.2343455
