Title :
A 3dB NF 0.1–6.6GHz inductorless wideband low-noise amplifier in 0.13µm CMOS
Author :
Asaad Wahba Marzouk, Shery ; Hussien, Faisal A. ; Shousha, A.M.
Author_Institution :
Dept. of Electron. & Electr. Commun. Eng., Cairo Univ., Cairo, Egypt
Abstract :
An inductorless wideband LNA is designed with low NF and high linearity. It is based on the use of both passive and active feedback with current reuse techniques to achieve the required low NF, high BW, and suitable gain. An auxiliary transistor is added to the differential implementation to achieve a high linearity. The circuit is designed in 0.13μm TSMC technology and exhibits a gain of 18.4dB over an entire bandwidth of 6.6GHz. Across the whole band of interest, the NF does not exceed 3dB, while the IIP3 is maintained above 6dBm, and it consumes 13.4mW DC power from a 1.5V supply.
Keywords :
CMOS analogue integrated circuits; MMIC amplifiers; UHF amplifiers; circuit feedback; field effect MMIC; low noise amplifiers; wideband amplifiers; IIP3; TSMC CMOS technology; active feedback; auxiliary transistor; current reuse techniques; frequency 0.1 GHz to 6.6 GHz; inductorless wideband LNA; inductorless wideband low-noise amplifier; low NF; noise figure 3 dB; passive feedback; power 13.4 mW; size 0.13 mum; voltage 1.5 V; CMOS integrated circuits; Linearity; Low-noise amplifiers; Noise; Noise measurement; Transistors; Wideband; high linearity; inductorless; wideband LNA;
Conference_Titel :
Circuits and Systems (MWSCAS), 2014 IEEE 57th International Midwest Symposium on
Conference_Location :
College Station, TX
Print_ISBN :
978-1-4799-4134-6
DOI :
10.1109/MWSCAS.2014.6908574
