DocumentCode :
2524041
Title :
Theory and interpretation of transient photoluminescence measurements
Author :
Marvin, D.C. ; Moss, S.C. ; Halle, L.F.
Author_Institution :
Aerospace Corp., Los Angeles, CA, USA
fYear :
1991
fDate :
7-11 Oct 1991
Firstpage :
198
Abstract :
Results of a series of computer simulations of a transient photoluminescence experiment are presented. It is demonstrated that even in regions where the experimentally obtained decay curves show single exponential behavior, the slopes do not correspond to any single physical carrier lifetime. A series of measurements over a range of intensities is required to extract such parameters
Keywords :
III-V semiconductors; digital simulation; luminescence of inorganic solids; photoluminescence; computer simulations; transient photoluminescence measurements; Charge carrier density; Charge carrier lifetime; Computational modeling; Computer simulation; Conducting materials; Gallium arsenide; Laser excitation; Neodymium; Photoluminescence; Photovoltaic cells;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
Type :
conf
DOI :
10.1109/PVSC.1991.169208
Filename :
169208
Link To Document :
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