DocumentCode
2524041
Title
Theory and interpretation of transient photoluminescence measurements
Author
Marvin, D.C. ; Moss, S.C. ; Halle, L.F.
Author_Institution
Aerospace Corp., Los Angeles, CA, USA
fYear
1991
fDate
7-11 Oct 1991
Firstpage
198
Abstract
Results of a series of computer simulations of a transient photoluminescence experiment are presented. It is demonstrated that even in regions where the experimentally obtained decay curves show single exponential behavior, the slopes do not correspond to any single physical carrier lifetime. A series of measurements over a range of intensities is required to extract such parameters
Keywords
III-V semiconductors; digital simulation; luminescence of inorganic solids; photoluminescence; computer simulations; transient photoluminescence measurements; Charge carrier density; Charge carrier lifetime; Computational modeling; Computer simulation; Conducting materials; Gallium arsenide; Laser excitation; Neodymium; Photoluminescence; Photovoltaic cells;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location
Las Vegas, NV
Print_ISBN
0-87942-636-5
Type
conf
DOI
10.1109/PVSC.1991.169208
Filename
169208
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