A 20-GSamples/s Track-Hold Amplifier in InP DHBT technology

Author

Bouvier, Y. ; Konczykowska, A. ; Ouslimani, A. ; Jorge, F. ; Riet, M. ; Godin, J.

Author_Institution

Akatel-Thales III-V Lab., Marcoussis, France

fYear

2007

fDate

8-10 Oct. 2007

Firstpage

1

Lastpage

4

Abstract

A fully differential 20 Gsample/s Track and Hold Amplifier with 20 GHz large-input-signal bandwidth is designed and fabricated in 210 GHz-fT-InP-DHBT on a 1.6 x 1.4 mm² chip. Spectral measurements in track mode give an SNR, a THD, and a SFDR respectively of 65 dB, -38 dB and -38 dB for input frequency up to 9 GHz and input voltage up to 0.5 Vpp. This THD is equivalent to 6 ENOB. Time domain measurements illustrate 20 GHz sampling with 2 and 5 GHz sinusoidal input signals.

Keywords

differential amplifiers; harmonic distortion; heterojunction bipolar transistors; indium compounds; sample and hold circuits; InP; InP DHBT technology; SFDR; THD; differential track-hold amplifier; double heterojunction bipolar transistor; frequency 2 GHz to 5 GHz; frequency 20 GHz; frequency 210 GHz; spurious-free dynamic range; time domain measurement; total harmonic distortion; Bandwidth; Capacitors; Circuits; Clocks; Germanium silicon alloys; Indium phosphide; Linearity; Optical amplifiers; Sampling methods; Silicon germanium; ADC; DHBT; InP; Index Terms; track-and-hold amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuit Conference, 2007. EuMIC 2007. European

Conference_Location

Munich

Print_ISBN

978-2-87487-002-6

Type

conf

DOI

10.1109/EMICC.2007.4412632

Filename

4412632