Improvement of silicon dioxide integrity against hole-related breakdown with the incorporation of foreign atoms: molecular orbital examination

Author

Maruizumi, Takuya ; Ushio, Jiro ; Takemura, Yoshiaki ; Miyao, Masanobu

Author_Institution

Central Res. Lab., Hitachi Ltd., Kokubunji, Japan

fYear

1998

fDate

22-25 Jun 1998

Firstpage

257

Lastpage

260

Abstract

The mechanism for the improvement of gate oxide integrity through the incorporation of nitrogen atoms was examined in terms of molecular orbital theory by considering the chemical bond changes that accompany hole trapping and which cause degradation of the oxide. We found that the robustness against hot-hole injection was significantly improved by the formation of the N≡Si₃ structure in the oxide

Keywords

MIS devices; PM3 calculations; bonds (chemical); dielectric thin films; hole traps; nitrogen; semiconductor device breakdown; semiconductor device reliability; silicon compounds; SiO₂; chemical bond changes; foreign atoms; hole trapping; hole-related breakdown; hot-hole injection; molecular orbital examination; oxide degradation; oxide integrity; robustness; Bonding; Chemicals; Electric breakdown; Electron traps; Nitrogen; Orbital calculations; Photonic band gap; Semiconductor films; Silicon compounds; Solid modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Conduction and Breakdown in Solid Dielectrics, 1998. ICSD '98. Proceedings of the 1998 IEEE 6th International Conference on

Conference_Location

Vasteras

Print_ISBN

0-7803-4237-2

Type

conf

DOI

10.1109/ICSD.1998.709274

Filename

709274