Title :
Electrostatic capacitances of high-speed SiGe HBT
Author :
Zerounian, Nicolas ; Garcia, Eloy Ramirez ; Aniel, Frédéric ; Barbalat, BenoÎt ; Chevalier, Pascal ; Chantre, Alain
Author_Institution :
Univ Paris-Sud, Orsay
Abstract :
The extrinsic electrostatic capacitances of high-speed SiGe HBTs are evaluated both with measurement and modeling. Shrinking dimensions of the core of the HBT increases the influence of the extrinsic capacitance in the performances. The extrinsic capacitances are of half values compare to the intrinsic ones, limiting the cut-off frequencies fT and fMAY by 10-12%, but care must be taken to avoid higher limitations associated with large electrostatic coupling in next device generation.
Keywords :
Ge-Si alloys; capacitance; heterojunction bipolar transistors; semiconductor device measurement; semiconductor device models; SiGe; electrostatic capacitance; electrostatic coupling; high-speed HBT; semiconductor measurement; semiconductor modeling; Capacitance measurement; Cutoff frequency; Electrostatic measurements; Epitaxial growth; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit modeling; Isolation technology; Silicon carbide; Silicon germanium;
Conference_Titel :
Microwave Integrated Circuit Conference, 2007. EuMIC 2007. European
Conference_Location :
Munich
Print_ISBN :
978-2-87487-002-6
DOI :
10.1109/EMICC.2007.4412646
