Electrostatic capacitances of high-speed SiGe HBT

Author

Zerounian, Nicolas ; Garcia, Eloy Ramirez ; Aniel, Frédéric ; Barbalat, BenoÎt ; Chevalier, Pascal ; Chantre, Alain

Author_Institution

Univ Paris-Sud, Orsay

fYear

2007

fDate

8-10 Oct. 2007

Firstpage

56

Lastpage

59

Abstract

The extrinsic electrostatic capacitances of high-speed SiGe HBTs are evaluated both with measurement and modeling. Shrinking dimensions of the core of the HBT increases the influence of the extrinsic capacitance in the performances. The extrinsic capacitances are of half values compare to the intrinsic ones, limiting the cut-off frequencies f_T and f_MAY by 10-12%, but care must be taken to avoid higher limitations associated with large electrostatic coupling in next device generation.

Keywords

Ge-Si alloys; capacitance; heterojunction bipolar transistors; semiconductor device measurement; semiconductor device models; SiGe; electrostatic capacitance; electrostatic coupling; high-speed HBT; semiconductor measurement; semiconductor modeling; Capacitance measurement; Cutoff frequency; Electrostatic measurements; Epitaxial growth; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit modeling; Isolation technology; Silicon carbide; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuit Conference, 2007. EuMIC 2007. European

Conference_Location

Munich

Print_ISBN

978-2-87487-002-6

Type

conf

DOI

10.1109/EMICC.2007.4412646

Filename

4412646