Title :
Conductance oscillations of a Si single electron transistor at room temperature
Author :
Takahashi, Y. ; Nagase, M. ; Namatsu, H. ; Kurihara, K. ; Iwdate, K. ; Nakajima, Y. ; Horiguchi, S. ; Murase, K. ; Tabe, M.
Author_Institution :
NTT LSI Labs., Kanagawa, Japan
Abstract :
The single electron transistor (SET) is a key element in single electronics where device operation is based on one-by-one electron manipulation utilizing the Coulomb blockade effect. However, SET operation has so far been limited to below 4 K because even the smallest capacitance C of the SET has been about 100 aF. This means the requirement of charging energy e/sup 2/(2C) being much larger than the thermal energy could only be met at very low temperatures. We report here a Si-SET whose capacitance is only about 2 aF. Owing to this small capacitance, the Si-SET shows conductance oscillation even at room temperature.<>
Keywords :
electric admittance; oscillations; silicon; single electron transistors; tunnel transistors; 100 aF; 4 K; Coulomb blockade effect; SET operation; Si; Si single electron transistor; Si-SET; capacitance; charging energy; conductance oscillation; conductance oscillations; device operation; one-by-one electron manipulation; room temperature; thermal energy; very low temperatures; Atomic layer deposition; Atomic measurements; Capacitance; Electrodes; Oxidation; Plasma temperature; Single electron transistors; Tunneling; Voltage; Wire;
Conference_Titel :
Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-2111-1
DOI :
10.1109/IEDM.1994.383257
