1.3 /spl mu/m monolithic integrated optoelectronic receiver using InGaAs MSM photodiode and AlGaAs/GaAs HEMTs grown on GaAs

Author

Hurm, V. ; Benz, W. ; Berroth, M. ; Fink, T. ; Fritzsche, D. ; Haupt, M. ; Hofmann, P. ; Kohler, K. ; Ludwig, M. ; Mause, K. ; Raynor, B. ; Rosenzweig, J.

Author_Institution

Fraunhofer-Inst. for Appl. Solid State Phys., Freiburg, Germany

fYear

1994

fDate

11-14 Dec. 1994

Firstpage

935

Lastpage

937

Abstract

The first 1.3 /spl mu/m monolithic integrated optoelectronic receiver using an InGaAs MSM photodiode and AlGaAs/GaAs HEMTs grown on a GaAs substrate has been fabricated. At each differential output the transimpedance is 26.8 k/spl Omega/. The bandwidth of 430 MHz implies suitability for transmission rates up to 622 Mbit/s.<>

Keywords

HEMT integrated circuits; III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; integrated optoelectronics; optical communication equipment; optical fibre communication; optical receivers; photodiodes; 1.3 mum; 430 MHz; 622 Mbit/s; AlGaAs; AlGaAs/GaAs HEMTs; GaAs; GaAs substrate; InGaAs; InGaAs MSM photodiode; bandwidth; differential output; monolithic integrated optoelectronic receiver; transimpedance; transmission rates; Differential amplifiers; Gallium arsenide; HEMTs; Indium gallium arsenide; Integrated optoelectronics; MODFETs; Optical pulse generation; Optical receivers; Photodiodes; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-2111-1

Type

conf

DOI

10.1109/IEDM.1994.383258

Filename

383258