High power S band limiter simulation with a physics-based accurate nonlinear PIN diode model

This paper deals with the simulation and the design of an active dual stage high power S band limiter. The contribution of this work relies on an accurate nonlinear PIN diode model that has been used to predict the limiter performances. This model takes into account recombination phenomenon in the heavily doped region and include junctions effects. In the first section, the model is presented and validated by measurement results on two thin diodes. In the second section, the limiter output power and isolation characteristics are validated by power measurements up to +55 dBm and by spectrum measurements.