Title :
A 0.29-/spl mu/m/sup 2/ MIM-CROWN cell and process technologies for 1-gigabit DRAMs
Author :
Kaga, T. ; Sudoh, Y. ; Goto, Hiromi ; Shoji, K. ; Kisu, T. ; Yamashita, H. ; Nagai, R. ; Iijima, S. ; Ohkura, M. ; Murai, F. ; Tanaka, T. ; Goto, Y. ; Yokoyama, N. ; Horiguchi, M. ; Isoda, M. ; Nishida, T. ; Takeda, E.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Abstract :
In keeping with the trend of reducing DRAM cell area, with a target for 1-gigabit DRAMs of less than 0.3 /spl mu/m/sup 2/, the authors have developed a 0.29-/spl mu/m/sup 2/ metal/insulator/metal crown-shaped capacitor (MIM-CROWN) cell with low height by using 0.16-/spl mu/m process technologies.<>
Keywords :
CMOS memory circuits; DRAM chips; MIM devices; integrated circuit technology; isolation technology; tantalum compounds; thin film capacitors; 0.16 micron; 1 Gbit; DRAM cell area reduction; MIM-CROWN cell; Ta/sub 2/O/sub 5/; crown-shaped capacitor cell; deep submicron process technologies; dynamic RAM; gigabit DRAMs; metal/insulator/metal capacitor; Annealing; Circuit testing; Fabrication; Lithography; MIM capacitors; Oscilloscopes; Pulse width modulation; Random access memory; Tin; Voltage;
Conference_Titel :
Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-2111-1
DOI :
10.1109/IEDM.1994.383261
