DocumentCode
2524473
Title
Theoretical modeling, near-optimum design and predicted performance of n+pp+ and p+nn+ indium phosphide homojunction solar cells
Author
Goradia, Chandra ; Thesling, William ; Weinberg, Irving
Author_Institution
Dept. of Electr. Eng., Cleveland State Univ., OH, USA
fYear
1991
fDate
7-11 Oct 1991
Firstpage
209
Abstract
Using a detailed simulation model of p+nn+ and n+pp+ indium phosphide (InP) homojunction solar cells, the authors have conducted extensive parametric variation computer simulation runs to help arrive at near-optimum designs of these two solar cell configurations. Values of all the geometrical and material parameters corresponding to the near-optimal designs of both these configurations are presented. For each configuration, results are given for parametric variation runs showing how the performance parameters J SC, V OC, and η vary with each of the cell parameters for the near-optimally designed cell
Keywords
III-V semiconductors; digital simulation; electronic engineering computing; indium compounds; semiconductor device models; solar cells; InP homojunction solar cells; geometrical parameters; material parameters; n+pp+ semiconductor; near-optimally designed cell; p+nn+ semiconductor; parametric variation computer simulation runs; Computational modeling; Computer simulation; Doping; Gallium arsenide; Indium phosphide; NASA; Photovoltaic cells; Photovoltaic systems; Predictive models; Solar power generation;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location
Las Vegas, NV
Print_ISBN
0-87942-636-5
Type
conf
DOI
10.1109/PVSC.1991.169210
Filename
169210
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