AlGaN/GaN HEMTs on (001) oriented silicon substrate based on 100nm SiN recessed gate technology for low cost device fabrication

Author

Boulay, S. ; Touati, S. ; Sar, A. ; Hoel, V. ; Gaquiere, C. ; De Jacger, J.C. ; Joblot, S. ; Cordier, Y. ; Semond, F. ; Massies, J.

Author_Institution

Manchester Univ., Manchester

fYear

2007

fDate

8-10 Oct. 2007

Firstpage

96

Lastpage

99

Abstract

This paper shows the capability of AlGaN/GaN high electron mobility transistors (HEMTs) with 0.1 mum gamma shaped gate length on (001) oriented silicon substrate for microwave power applications. The gate technology is based on silicon nitride thin film and uses a digital etching to perform the recess through the SiN mask. Output current densities of 420 mA/mm, extrinsic cut-off frequencies (f_T) of 28 GHz and maximum oscillations frequencies (f_max) of 46C Hz are measured on 300 mum gate periphery device. At 2.15 GK/., an output power density of 1 W/mm associated to a power added efficiency of 17% and a linear gain of 24 dB are achieved lit V_DS = 30 V and V_GS = -1.2 V.

Keywords

aluminium compounds; current density; etching; gallium compounds; high electron mobility transistors; masks; microwave field effect transistors; semiconductor thin films; silicon; silicon compounds; substrates; AlGaN-GaN; HEMT; SiN; current density; device fabrication; digital etching; frequency 28 GHz; gain 24 dB; high electron mobility transistors; microwave power applications; oriented silicon substrate; recessed gate technology; semiconductor mask; size 100 nm; size 300 mum; thin film technology; Aluminum gallium nitride; Costs; Cutoff frequency; Fabrication; Gallium nitride; HEMTs; MODFETs; Microwave devices; Silicon compounds; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuit Conference, 2007. EuMIC 2007. European

Conference_Location

Munich

Print_ISBN

978-2-87487-002-6

Type

conf

DOI

10.1109/EMICC.2007.4412656

Filename

4412656