Formation and characterization of CdSe thin films on Ni substrate

Author

Athanassopoulou, M.D. ; Argyropoulos, Th ; Mergos, J.A. ; Novakovic, J. ; Dervos, C.T.

Author_Institution

Sch. of Electr. & Comput. Eng., Nat. Tech. Univ. of Athens, Athens, Greece

fYear

2010

fDate

26-28 April 2010

Firstpage

374

Lastpage

377

Abstract

Preparation and characterization of CdSe thin film semiconductors, prepared by cathodic electrodeposition from an acid sulfate solution (CdSO₄ - SeO₂), were investigated. The effect of the bath temperature and how it affects the CdSe deposits was studied. The formation of compact barrier layers of zinc blende CdSe was attained. X-ray diffraction (XRD) and scanning electron microscopy (SEM) tests present a remarkably intense cubic structure, without any post-thermal treatment. The Ni/CdSe/Au structure may exhibit rectifying properties depending on the temperature during the electrodeposition. High temperature baths make the deposits to obtain ohmic properties.

Keywords

II-VI semiconductors; X-ray diffraction; cadmium compounds; electrodeposition; gold; metal-semiconductor-metal structures; scanning electron microscopy; semiconductor thin films; wide band gap semiconductors; CdSe; Ni; Ni-CdSe-Au; SEM; X-ray diffraction; XRD; acid sulfate solution; bath temperature; cathodic electrodeposition; compact barrier layers; cubic structure; nickel substrate; ohmic properties; scanning electron microscopy; semiconductor thin film; Gold; Scanning electron microscopy; Semiconductor thin films; Substrates; Temperature; Testing; Transistors; X-ray diffraction; X-ray scattering; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

MELECON 2010 - 2010 15th IEEE Mediterranean Electrotechnical Conference

Conference_Location

Valletta

Print_ISBN

978-1-4244-5793-9

Type

conf

DOI

10.1109/MELCON.2010.5476258

Filename

5476258