Title :
Wideband millimeter wave pin diode spdt switch using ibm 0.13µm sige technology
Author :
Lam, Kwanhim ; Ding, Hanyi ; Liu, Xuefeng ; Orner, Bradley A. ; Rascoe, Jay ; Dewitt, Barbara ; Mina, Essam ; Gaucher, Brian
Author_Institution :
IBM, Essex Junction
Abstract :
Feasibility of wideband on-chip RF switch operating at millimeter wave frequencies using PIN diodes in IBM .13 mum SiGe technology is demonstrated. A SPDT reflective switch targeting 60 GHz wireless and radar applications is designed, fabricated, and measured. Good correlations between simulation and hardware are reported. Measured data show 2.0 to 2.7 dB of insertion loss over 51 to 78 GHz bandwidth with better than 12 dB return loss and 25 to 35 dB of isolation.
Keywords :
Ge-Si alloys; millimetre wave diodes; p-i-n diodes; semiconductor switches; IBM technology; SPDT switch; bandwidth 78 GHz; loss 2.0 dB to 2.7 dB; reflective switch; size 0.13 mum; wideband millimeter wave PIN diode; Germanium silicon alloys; Hardware; Millimeter wave measurements; Millimeter wave radar; Millimeter wave technology; Radar applications; Radio frequency; Silicon germanium; Switches; Wideband;
Conference_Titel :
Microwave Integrated Circuit Conference, 2007. EuMIC 2007. European
Conference_Location :
Munich
Print_ISBN :
978-2-87487-002-6
DOI :
10.1109/EMICC.2007.4412659
