DocumentCode :
2524549
Title :
100 GHz push-push oscillator in 90 nm CMOS technology
Author :
Karttaavi, Timo ; Holmberg, Jan
Author_Institution :
ITT, Espoo
fYear :
2007
fDate :
8-10 Oct. 2007
Firstpage :
112
Lastpage :
114
Abstract :
A 100 GHz fixed-tuned oscillator was designed and fabricated using a 90 nm bulk CMOS process. Push-push mode was chosen to improve the power output. The oscillator exhibits -3 dBm output power at 101 GHz with 27 mW power consumption. The measured SSB phase noise is -85 dBc/Hz at 1 MHz offset Resonators are implemented with transmission lines to avoid the need of high quality capacitors and inductors.
Keywords :
CMOS integrated circuits; oscillators; resonators; CMOS technology; fixed-tuned oscillator; frequency 100 GHz; push-push oscillator; Amplitude modulation; CMOS process; CMOS technology; Energy consumption; Noise measurement; Oscillators; Phase measurement; Phase noise; Power generation; Transmission line measurements;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Integrated Circuit Conference, 2007. EuMIC 2007. European
Conference_Location :
Munich
Print_ISBN :
978-2-87487-002-6
Type :
conf
DOI :
10.1109/EMICC.2007.4412660
Filename :
4412660
Link To Document :
بازگشت