Title :
2 V-operation pseudomorphic power HEMT with 62% power-added efficiency for cellular phones
Author :
Ono, H. ; Umemoto, Y. ; Ichikawa, H. ; Mori, Marco ; Kudo, M. ; Kagaya, O. ; Imamura, Y.
Author_Institution :
Central Res. Labs., Hitachi Ltd., Tokyo, Japan
Abstract :
We demonstrate maximum power-added efficiency of 62% with a 2-V drain bias at L-band frequencies on a pseudomorphic high electron mobility transistor (PHEMT) for use in analog cellular phones. This PHEMT is fabricated by advanced power-device technology featuring a GaAs-InGaAs-GaAs PHEMT structure with a low-temperature process and gate-stress compensation. Power performance evaluated under the Japanese standards for 1.5-GHz personal digital cellular phones (PDC) exhibits a very high power-added efficiency of 51% (54%) with an output power of 0.8 W (1.7 W) at a 2-V (3-V) drain bias. The adjacent-channel leakage is 50 dBc at 1.5 GHz +/-50 KHz when tested at this output power. These results indicate that the proposed PHEMT power device is highly suitable for use in analog and digital cellular phone systems.<>
Keywords :
UHF field effect transistors; cellular radio; cordless telephone systems; gallium arsenide; power HEMT; power field effect transistors; 0.8 to 1.7 W; 1.5 GHz; 2 to 3 V; 51 to 62 percent; GaAs-InGaAs-GaAs; Japanese standards; L-band frequencies; PHEMT; UHF device; adjacent-channel leakage; advanced power-device technology; analog cellular phones; digital cellular phone; gate-stress compensation; high electron mobility transistor; low-temperature process; power-added efficiency; pseudomorphic power HEMT; Cellular phones; Electron mobility; Frequency; HEMTs; L-band; MODFETs; PHEMTs; Power generation; Testing; Transistors;
Conference_Titel :
Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-2111-1
DOI :
10.1109/IEDM.1994.383268
