Title :
Simultaneous dual-band high efficiency harmonic tuned power amplifier in GaN technology
Author :
Colantonio, P. ; Giannini, F. ; Giofrè, R. ; Piazzon, L.
Author_Institution :
Univ. of Rome Tor Vergata Via del Politecnico I, Rome
Abstract :
In this contribution for the first time the design of a simultaneous dual band high efficiency harmonic tuned power amplifier is presented. The active device used is a GaN HEMT with 1 mm of gate periphery. The realised amplifier operates at 2.45 Ghz and 3.3 GHz, and the measured results shown a drain efficiency of 53% and 46%, with an output power of 33 dBm and 32.5 dBm at the two hard widths. A zero transmission condition has been obtained, resulting in a measured value of S21 lower than -15 dB at 2.8 GHz.
Keywords :
III-V semiconductors; UHF amplifiers; UHF field effect transistors; gallium compounds; harmonic analysis; microwave field effect transistors; microwave power amplifiers; power HEMT; GaN; HEMT; dual-band high efficiency harmonic tuned power amplifier; frequency 2.8 GHz; frequency 3.3 GHz; zero transmission condition; Bandwidth; Dual band; Frequency; Gallium nitride; High power amplifiers; Impedance matching; Power amplifiers; Power harmonic filters; Power system harmonics; Voltage control;
Conference_Titel :
Microwave Integrated Circuit Conference, 2007. EuMIC 2007. European
Conference_Location :
Munich
Print_ISBN :
978-2-87487-002-6
DOI :
10.1109/EMICC.2007.4412664
